Do you face any of these problems?

  • Need to achieve high productivity
  • Need to achieve increased brightness of LED
  • Need to achieve high resolution processing of compounds
  • Need to perform etching of non-volatile materials

List of dry etcher applicable applications

List of Dry Etcher Applicable Applications

▲Examples of utilization and application of various materials

Panasonic dry etching solutions

  • High productivity by high-speed processing of LED thin film
  • Etching PCB surface in the shapes like trapezoid, cone etc.,
  • Multi ESC electrode that is capable of direct pickup of multiple wafers
  • Batch treatment of multiple wafers (tray specification)
  • Abundant process library and processing results
  • Three types of plasma source based on process chamber structure and application
    (1) High accuracy (MS-ICP)
    (2) High speed (BM-ICP)
    (3) Non-volatile material (FS-ICP)
  • Supply of two types of wafers (atmospheric transfer, vacuum load lock system)
  • For anti-corrosion treatment, ashing chamber and rinse chamber are expandable

Examples of applications in compound semiconductor

Examples of compound semiconductor applications
Examples of compound semiconductor applications

Examples of application in LED and optical communication devices

LED application case studies
LED application case studies

▲Case studies of application and processing of LED

Examples of applications in power device

Examples of power device applications

Examples of applications in high-frequency communication devices

Examples of applications in high-frequency communication devices

Examples of applications in MEMS and sensors

MEMS/Sensors

Processing of dielectric films, metals, and silicon used in gyroscopes, pressure sensors, printer heads, etc.


■Piezoelectric MEMS, PZT thick film etching (FS-ICP plasma source application)


PZT thick film

W to W stability

Graph: W to W stability

PZT E/R ≧ 50 nm/min
Uniformity
 In wafer ≦ ±5%
 W to W ≦ ±1%
PR selectivity ≧ 0.7
Pt selectivity ≧ 8


■Non-volatile material etching (FS-ICP plasma source application)


NiFe/NiCo etching

NiFe/NiCo etching

E/R ~100nm/min.
Unif. ≦ ±5%
PR Sel. ≧ 0.6~1.5
No fence,  No corrosion

Au etching

Au etching

E/R ≧400nm/min.
Unif. ≦ ±5%
PR Sel. ≧ ~2.0
No fence

Pt etching

Pt etching

E/R ≧200nm/min.
Unif. ≦ ±5%
HM Sel. ≧ 10
No fence

Pt/SBT/Pt etching

Pt/SBT/Pt etching

E/R ≧140nm/min.
Unif. ≦ ±5%
0.4um L/S
No fence

Related products

Dry Etcher APX300

Dry Etcher

APX300

Housing multiple devices in one box contributes to increase in area productivity.

See Details

Dry Etcher APX300 (S option)

Dry Etcher

APX300 (S option)

The E620 process chamber with extensive track record is bonded on the latest APX300 platform.

See Details

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