Dry Etcher [Solution]
Do you face any of these problems?
- Need to achieve high productivity
- Need to achieve increased brightness of LED
- Need to achieve high resolution processing of compounds
- Need to perform etching of non-volatile materials
Successful application to various devices
Target machinery and target packages
| Classification | Single wafer/batch type dry etcher | Single wafer type dry etcher |
| Model |
APX300 |
APX300-S |
|---|---|---|
| Exterior | Housing multiple devices in one box increases the area productivity |
The E620 process chamber with extensive track record is bonded on the latest APX300 platform |
| Features |
|
|
| Target wafer | Multiple wafers Batch treatment (tray specification) |
Solutions
LED and power device application case studies
LED
Low-damage and high-speed processing of GaN contributes to high productivity in LED electrode formation/element separation processes
PSS (Patterned Sapphire Substrate) processing contributes to increased brightness of LED elements
Supports batch treatment of multiple sheets of φ2, 4, 6 inch wafers
▲Case studies of application and processing of LED
Power device (Si, SiC, GaN)
Realizes high-resolution processing that matches every need of next generation power devices
| SiC power device, SiO2 mask etching |
SiC power device, SiC trench etching |
|---|---|
| Si power device, Si trench etching | SiC power device, SiC recess etching, Poly-Si entire surface etch back |
▲Case studies of application and processing of power devices
Related products
Dry Etcher
APX300
Housing multiple devices in one box contributes to increase in area productivity.
Dry Etcher
APX300 (S option)
The E620 process chamber with extensive track record is bonded on the latest APX300 platform.
Application case studies of communication device and MEMS and sensor
SAW device / communication device
Realization of high resolution processing of IDT (interdigital transducer) and various metals
Achieves high productivity by batch etching of multiple wafers with thick oxide film or LT/LN wafers
High speed and deep etching process of compound PCB (GaAs via, SiC via, Si via)
GaAs scribe and dicing process
▲Case studies of application and utilization of each material
MEMS/sensor
Etching of various materials (Piezo, Non-volatile, Si) such as the gyro, pressure sensors and printer head
Piezoelectric MEMS, PZT thick film etching (FS-ICP plasma source application)
W to W stability
PZT E/R ≧ 50 nm/min
Uniformity
In wafer ≦ ±5%
W to W ≦ ±1%
PR selectivity ≧ 0.7
Pt selectivity ≧ 8
Non-volatile material etching (FS-ICP plasma source application)
NiFe/NiCo etching
E/R ~100nm/min.
Unif. ≦ ±5%
PR Sel. ≧ 0.6~1.5
No fence, No corrosion
Au etching
E/R ≧400nm/min.
Unif. ≦ ±5%
PR Sel. ≧ ~2.0
No fence
Pt etching
E/R ≧200nm/min.
Unif. ≦ ±5%
HM Sel. ≧ 10
No fence
Pt/SBT/Pt etching
E/R ≧140nm/min.
Unif. ≦ ±5%
0.4um L/S
No fence
▲ Case studies of application and processing of each material
Related products
Dry Etcher
APX300
Housing multiple devices in one box contributes to increase in area productivity.
Dry Etcher
APX300 (S option)
The E620 process chamber with extensive track record is bonded on the latest APX300 platform.