Do you face any of these problems?

  • Need to achieve high productivity
  • Need to achieve increased brightness of LED
  • Need to achieve high resolution processing of compounds
  • Need to perform etching of non-volatile materials

Successful application to various devices

Power device (Si, SiC, GaN)
SAW and communication device
MEMS and sensor

Target machinery and target packages

  • High productivity by high-speed processing of LED thin film
  • Etching PCB surface in the shapes like trapezoid, cone etc.,
  • Multi ESC electrode that is capable of direct pickup of multiple wafers
  • Batch treatment of multiple wafers (tray specification)
  • Abundant process library and processing results
  • Three types of plasma source based on process chamber structure and application
    (1) High accuracy (MS-ICP)
    (2) High speed (BM-ICP)
    (3) Non-volatile material (FS-ICP)
  • Supply of two types of wafers (atmospheric transfer, vacuum load lock system)
  • For anti-corrosion treatment, ashing chamber and rinse chamber are expandable

Solutions

LED and power device application case studies


LED

Low-damage and high-speed processing of GaN contributes to high productivity in LED electrode formation/element separation processes
PSS (Patterned Sapphire Substrate) processing contributes to increased brightness of LED elements
Supports batch treatment of multiple sheets of φ2, 4, 6 inch wafers


LED application case studies
LED application case studies

▲Case studies of application and processing of LED


Power device (Si, SiC, GaN)

Realizes high-resolution processing that matches every need of next generation power devices


SiC power device, SiO2 mask etching

SiC power device, SiC trench etching

Si power device, Si trench etching SiC power device, SiC recess etching, Poly-Si entire surface etch back

▲Case studies of application and processing of power devices


Related products


Dry Etcher APX300

Dry Etcher

APX300

Housing multiple devices in one box contributes to increase in area productivity.

See Details

Dry Etcher APX300 (S option)

Dry Etcher

APX300 (S option)

The E620 process chamber with extensive track record is bonded on the latest APX300 platform.

See Details


Application case studies of communication device and MEMS and sensor


SAW device / communication device

Realization of high resolution processing of IDT (interdigital transducer) and various metals
Achieves high productivity by batch etching of multiple wafers with thick oxide film or LT/LN wafers
High speed and deep etching process of compound PCB (GaAs via, SiC via, Si via)
GaAs scribe and dicing process


Image: Case studies of application and utilization of each material

▲Case studies of application and utilization of each material


MEMS/sensor

Etching of various materials (Piezo, Non-volatile, Si) such as the gyro, pressure sensors and printer head


Piezoelectric MEMS, PZT thick film etching (FS-ICP plasma source application)


PZT thick film

W to W stability

Graph: W to W stability

PZT E/R ≧ 50 nm/min
Uniformity
 In wafer ≦ ±5%
 W to W ≦ ±1%
PR selectivity ≧ 0.7
Pt selectivity ≧ 8


Non-volatile material etching (FS-ICP plasma source application)


NiFe/NiCo etching

NiFe/NiCo etching

E/R ~100nm/min.
Unif. ≦ ±5%
PR Sel. ≧ 0.6~1.5
No fence,  No corrosion

Au etching

Au etching

E/R ≧400nm/min.
Unif. ≦ ±5%
PR Sel. ≧ ~2.0
No fence

Pt etching

Pt etching

E/R ≧200nm/min.
Unif. ≦ ±5%
HM Sel. ≧ 10
No fence

Pt/SBT/Pt etching

Pt/SBT/Pt etching

E/R ≧140nm/min.
Unif. ≦ ±5%
0.4um L/S
No fence


▲ Case studies of application and processing of each material


Related products


Dry Etcher APX300

Dry Etcher

APX300

Housing multiple devices in one box contributes to increase in area productivity.

See Details

Dry Etcher APX300 (S option)

Dry Etcher

APX300 (S option)

The E620 process chamber with extensive track record is bonded on the latest APX300 platform.

See Details

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