Dry Etching Equipment APX300 (S Option)

Key features and functions

Two types of plasma sources enable high-speed and high-precision machining
Achieves high-speed deep drilling of compound materials (substrate penetration, etc.) and control of processed film thickness
Achieves metal machining without residue and corrosion by adding usher and rinse chambers
In-situ garment removal function with top plate enables stable machining of non-volatile materials

Features

The APX300 (S option) is a dry etching system specializing in the processing of chemical compounds and non-volatile materials. It is compatible with wafers of 2 inches to 8 inches and irregular substrates, and two transport methods can be selected: “Atmospheric loading supply ” and “ Vacuum load lock supply ” CE certificated.

This equipment is a single-wafer processing type for wafers of 8 inches or smaller, and can be selected and optimized for a wide range of process applications such as power semiconductors, optical communications, high-frequency communications, RF modules, and MEMS.

In addition, as a post-etching process, the ashing and rinsing chambers can be expanded according to the process application.

MSC-ICP Specification with Ashing and Rinsing Chambers

Extended specifications with ashing and rinse chambers enable anticorrosion treatment during metal processing.

Ashing chamber：　　
Supports high/low temperature/H2O ashing
Resist ashing treatment, dechlorination/defluorination anticorrosion treatment
Rinse chamber：　　
In-line cleaning (pure water, * chemical solution) prevents corrosion that is difficult to control by ashing

BM-ICP Specification

High-density plasma and chamber temperature control (top plate and side wall) provide stable high-speed processing

High-density plasma source capable of applying high power
Cooling and temperature control of plasma source and chamber side wall stabilize temperature and suppress thermal damage to wafer

FS-ICP Specification with Ashing and Rinsing Chambers

FS-ICP enables stable machining of non-volatile materials by removing garments attached to the top plate

※Corrosion protection is possible with extended specifications (Ashing and Rinsing Chambers)

FS-ICP Plasma Source：　
FS antenna directly under the ICP coil removes deposits attached to the top plate, enabling longer maintenance cycle (cleaning frequency: less)
RF applied independently to ICP and FS
Control Achieves wide process window and stability
Ashing/Rinsing Chambers：　　
In-line ashing/rinsing prevents resist removal and chlorine/fluorine corrosion

List of applicable applications

List of Dry Etcher Applicable Applications

Examples of application

Application in high-frequency communication devices

Application for non-volatile materials

By applying radio frequency (RF) to the FS antenna and sputtering the top plate, it is possible to suppress and remove unnecessary deposits from the top plate.

In addition, by generating high-density plasma and maintaining stable plasma during mass production of non-volatile materials, long-term MTWC is realized.