Device-related Systems – APX300 Dry Etcher
Dry Etcher APX300
A fully automatic batch dry etching system capable of processing wafers up to 6 inches in size
APX300 Dry Etcher
Main Features
- Advanced ICP realizes high accuracy & high productivity
- Multi number of wafers can be etched at once by by a unique batch ESC electrode,and and high-precision high-speed etching at the level of single-wafer processing is realized
- Many achievements in the machining of compound materials, substrate materials, and insulating films
- Contributing to improved areal productivity through one-box equipment configuration (Equipment dimensions W1350 mmx D2230 mmx H2000 mm)
The APX300 is a fully automatic batch dry etching system capable of processing wafers up to 6 inches in size. It can process 7 x 4 inch wafers and 3 x 6 inch wafers simultaneously, helping customers reduce production costs in the etching of PSS, GaN, insulating films, etc.
Demand for devices is expected to increase, especially in growing markets such as power semiconductors, optical and RF communications, RF modules, and MEMS. our company's batch processing technology will help improve production efficiency and reduce costs in these fields.
APX300 Dry Etcher
Strengths and Features
Advanced-ICP Plasma Source/Multi-ESC Electrode
Advanced-MSC plasma source：
・High-efficiency coils with low inductance enable high-density,
high-uniformity, large-area plasma generation
・Wide discharge area can be maintained
•Multi-ESC Electrode：
・High cooling efficiency and high reproducibility are realized
by the ESC electrode that can directly adsorb each substrate
・Achieves high-speed machining and wide process window
List of applicable applications
Examples of application in LED and optical communication devices
Examples of applications in high-frequency communication devices
Related solutions
About Dry Etcher
Examples of LED and power devices, and communication devices and MEMS and sensors
Main Specifications
| APX300 Dry Etcher | |
|---|---|
| Plasma source | ICP Plasma |
| Process gas | 4 Lines ( standard ) ( Maximum 6 Lines : Chlorinated Gas , Fluoride Gas , Ar , O2 , He , etc. ) |
| Wafer size | φ100 mm wafer with orientation flat ( standard ) |
Footnotes
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