Device-related Systems – MD-P300HS Flip-chip Bonder
MD-P300HS Flip-chip Bonder
Improves semiconductor manufacturing productivity and realizes high-quality and high-precision bonding
MD-P300HS Flip-chip Bonder
Main Features
- Low-temperature bonding by ultrasonic technology reduces damage to devices and significantly reduces process time
- The post-bonding process can be introduced at low cost due to compatibility with conventional equipment and materials
- Improved bonding accuracy of ultrasonic technology from ±5 μm to ±3 μm enables higher performance and thinner semiconductor packages such as FCBGA, FCCSP, and optical communication devices
- Real-time monitoring (Bond force, voltage/current/power, impedance, bump crush height, etc.) enables stable quality control by detecting abnormalities in the bonding process
MD-P300HS Flip-chip Bonder
Strengths and Features
１．Improved productivity by ultrasonic bonding
- Ultrasonic technology enables bonding at low temperatures to reduce device damage and warpage, while reducing the process time from more than 10 seconds※1in the thermocompression bonding method to less than 2 seconds to ensure quality.
- Conventional C4 equipment and materials can be used in the post-bonding process, enabling low-cost installation.
※1 Evaluation data using conventional MD-P300 (NM-EFF1C)
２．Improved bonding accuracy
- The bonding accuracy of conventional ultrasonic technology has been improved from ±5 μm to ±3 μm to meet the needs for higher performance and thinner packaging of next-generation semiconductors such as FCBGA (flip-chip ball grid array), FCCSP (flip-chip chip size package), and optical communication devices.
３．Visualization of bonding quality
- Stable quality control is achieved with the ability to constantly monitor conditions during bonding and to monitor process abnormalities such as bond force, voltage/current/power, impedance and bump crush height in real time.
Main Specifications
| MD-P300HS Flip-chip Bonder | |
|---|---|
| Placement Accuracy | XY = ± 0.003 mm ( 3σ ) 、θ = ± 0.05 ゜ ( 3σ ) |
| Substrate dimensions | L 240 mm × W 70 mm ～ Ｌ101 mm × W 300 mm
|
| Die dimensions (mm) | L 2 mm × W 2 mm to Ｌ8 mm × W 8 mm *Dies with a diagonal length ≦ 10 mm |
| Die Supply | Wafer frame 12 inches ( Option : 8 inches )
|
| Bonding Load | VCM head ( 90 N head ) Bonding ( static ) load : 2 to 90 N ( VCM load control ) 1 to 90 N ( handled individually )
|
Footnotes
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