Dry Etching Equipment APX300 (S Option)
APX300 Dry Etcher（S Option）
Main Features
- Two types of plasma sources enable high-speed and high-precision machining
Achieves high-speed deep drilling of compound materials (substrate penetration, etc.) and control of processed film thickness - Achieves metal machining without residue and corrosion by adding usher and rinse chambers
- In-situ garment removal function with top plate enables stable machining of non-volatile materials
This equipment is a single-wafer processing type for wafers of 8 inches or smaller, and can be selected and optimized for a wide range of process applications such as power semiconductors, optical communications, high-frequency communications, RF modules, and MEMS.
In addition, as a post-etching process, the ashing and rinsing chambers can be expanded according to the process application.
APX300 Dry Etcher（S Option）
Strengths and Features
MSC-ICP Specification with Ashing and Rinsing Chambers
Extended specifications with ashing and rinse chambers enable anticorrosion treatment during metal processing.
- Ashing chamber：
Supports high/low temperature/H2O ashing
Resist ashing treatment, dechlorination/defluorination anticorrosion treatment - Rinse chamber：
In-line cleaning (pure water, * chemical solution) prevents corrosion that is difficult to control by ashing
BM-ICP Specification
High-density plasma and chamber temperature control (top plate and side wall) provide stable high-speed processing
- High-density plasma source capable of applying high power
- Cooling and temperature control of plasma source and chamber side wall stabilize temperature and suppress thermal damage to wafer
FS-ICP Specification with Ashing and Rinsing Chambers
FS-ICP enables stable machining of non-volatile materials by removing garments attached to the top plate
※Corrosion protection is possible with extended specifications (Ashing and Rinsing Chambers)
- FS-ICP Plasma Source：
FS antenna directly under the ICP coil removes deposits attached to the top plate, enabling longer maintenance cycle (cleaning frequency: less)
RF applied independently to ICP and FS
Control Achieves wide process window and stability - Ashing/Rinsing Chambers：
In-line ashing/rinsing prevents resist removal and chlorine/fluorine corrosion
List of applicable applications
Examples of application
Application in high-frequency communication devices
Application for non-volatile materials
By applying radio frequency (RF) to the FS antenna and sputtering the top plate, it is possible to suppress and remove unnecessary deposits from the top plate.
In addition, by generating high-density plasma and maintaining stable plasma during mass production of non-volatile materials, long-term MTWC is realized.
Related solutions
About Dry Etcher
Examples of LED and power devices, and communication devices and MEMS and sensors
Main Specifications
| APX300 Dry Etcher（S Option） | |
|---|---|
| Plasma source | ICP Plasma
|
| Process gas | Standard 4 lines ( Maximum 6 Lines : Chlorinated Gas , Fluoride Gas , Ar , O2 , He , etc. )
|
| Wafer size | φ100 mm / 150 mm wafer with orientation flat φ200 mm wafer with notch |
Footnotes
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